4 A peak drive — the switching-speed tradeoff
The ADP3624ARHZ: Rated for 4 A peak source and 4 A peak sink current, this driver can charge and discharge the gate capacitance of a medium-power N-Channel MOSFET quickly — the 10 ns typical rise and fall time means the FET spends minimal time in the linear region, which keeps switching losses down.
Low-side, dual independent channels — layout implications
Two independent non-inverting low-side drivers in one 8-MSOP-EP package — each channel drives its own N-Channel MOSFET with separate inputs, so you can switch two FETs with independent timing or parallel them for higher current.
ADP3624ARDZ — same silicon, different package
The ADP3624ARDZ is the functional equivalent in an 8-SOIC-EP package — same 4 A peak output, same 10 ns rise/fall time, same supply range and temperature grade. The only difference is the package footprint: the ARHZ uses the 8-MSOP-EP (3.00 mm width), while the ARDZ uses the wider 8-SOIC-EP. If your board layout already has an SOIC-8 footprint, the ADP3624ARDZ drops in without rewiring; if you need the smaller MSOP-8 footprint, the ADP3624ARHZ is the correct choice. Both are active and ROHS3 compliant.