
1N6478-E3/96
Vishay General Semiconductor - Diodes Division
5 variants · Vishay
The Vishay Vishay 1N64 Series series groups 5 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common capacitance @ vr, f of 8pF @ 4V, 1MHz, case of DO-213AB, MELF (Glass) and current - average rectified of 1A. Variants differ by current - reverse leakage @ vr, operating temperature - junction and package, so you can match the exact current - reverse leakage @ vr your application requires using the selection guide below. All listed Vishay 1N64 Series part numbers are active and orderable.
| Parameter | 1N6478-E3/96 | 1N6480-E3/96 | 1N6482-E3/96 | 1N6483-E3/96 | 1N6484-E3/96 |
|---|---|---|---|---|---|
| Current - reverse leakage @ vr | 10 µA @ 50 V | 10 µA @ 200 V | 10 µA @ 600 V | 10 µA @ 800 V | 10 µA @ 1000 V |
| Operating temperature - junction | -65°C~175°C | -65°C~175°C | -65°C~175°C | -65°C~175°C | -65°C ~ 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR); Cut Tape (CT) | Tape & Reel (TR) Cut Tape (CT) |
| Voltage - DC reverse (Vr) | 50 V | 200 V | 600 V | 800 V | 1000 V |
Request a quote on any Vishay 1N64 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division