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Vishay Siliconix SI4936CDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4936CDY-T1-GE3

MPNSI4936CDY-T1-GE3
Active

MOSFET 2N-CH 30V 5.8A 8-SOIC

$0.9900Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI4936CDY-T1-GE3 Technical Specifications
ParameterValue
SeriesTrenchFET®
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.8A
Power - max2.3W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ManufacturerVishay Siliconix
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9nC @ 10V
Input capacitance (Ciss) (Max) @ vds325pF @ 15V