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Vishay Siliconix SI4946BEY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4946BEY-T1-GE3

MPNSI4946BEY-T1-GE3
Active
$1.5100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4946BEY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C6.5A
Power - max3.7W
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs41mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V
Input capacitance (Ciss) (Max) @ vds840pF @ 30V