SI4946BEY-T1-GE3

Vishay Siliconix

Vishay Siliconix SI4946BEY-T1-GE3
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[IN STOCK] In Stock: 250 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI4946BEY-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C6.5A
Power - max3.7W
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs41mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V
Input capacitance (Ciss) (Max) @ vds840pF @ 30V
SI4946BEY-T1-GE3
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