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Vishay Siliconix SI2308BDS-T1-BE3 — Discrete Semiconductors

Vishay Siliconix SI2308BDS-T1-BE3

MPNSI2308BDS-T1-BE3
Active

N-CHANNEL 60-V (D-S) MOSFET

$0.5600Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI2308BDS-T1-BE3 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.9A (Ta), 2.3A (Tc)
Power dissipation1.09W (Ta), 1.66W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs156mOhm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds190 pF @ 30 V