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Vishay Siliconix 2N7002-T1-GE3 — Discrete Semiconductors

Vishay Siliconix 2N7002-T1-GE3

MPN2N7002-T1-GE3
Active

MOSFET N-CH 60V 115MA TO236

$0.4200Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

2N7002-T1-GE3 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C115mA (Ta)
Power dissipation200mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7.5Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds50 pF @ 25 V