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Vishay Siliconix SI4992EY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4992EY-T1-E3

MPNSI4992EY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4992EY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage75V
Current - continuous drain (Id) @ 25°C3.6A
Power - max1.4W
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs48mOhm @ 4.8A, 10V
Gate charge (Qg) (Max) @ vgs21nC @ 10V