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Vishay Siliconix SI4973DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4973DY-T1-GE3

MPNSI4973DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4973DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.8A
Power - max1.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 7.6A, 10V
Gate charge (Qg) (Max) @ vgs56nC @ 10V