Vishay Siliconix SI4966DY-T1-GE3
MPNSI4966DY-T1-GE3
Obsolete
$1.0200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Manufacturer | Vishay Siliconix |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 25mOhm @ 7.1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 50nC @ 4.5V |