Skip to main content
Vishay Siliconix SI4963BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4963BDY-T1-E3

MPNSI4963BDY-T1-E3
Active

MOSFET 2P-CH 20V 4.9A 8-SOIC

$1.5400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4963BDY-T1-E3 specifications
ParameterValue
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.9A
Power - max1.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs32mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs21nC @ 4.5V