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Vishay Siliconix SI4953ADY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4953ADY-T1-GE3

MPNSI4953ADY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4953ADY-T1-GE3 specifications
ParameterValue
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.7A
Power - max1.1W
PackageCut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs53mOhm @ 4.9A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V