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Vishay Siliconix SI4943BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4943BDY-T1-E3

MPNSI4943BDY-T1-E3
Active
$2.1100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4943BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.3A
Power - max1.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs19mOhm @ 8.4A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 5V