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Vishay Siliconix SI4922BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4922BDY-T1-E3

MPNSI4922BDY-T1-E3
Active
$1.6300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4922BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C8A
Power - max3.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs62nC @ 10V
Input capacitance (Ciss) (Max) @ vds2070pF @ 15V