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Vishay Siliconix SI4914DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4914DY-T1-E3

MPNSI4914DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4914DY-T1-E3 specifications
ParameterValue
SeriesLITTLE FOOT®
FET type2 N-Channel (Half Bridge)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.5A, 5.7A
Power - max1.1W, 1.16W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs8.5nC @ 4.5V