Vishay Siliconix SI4910DY-T1-E3
MPNSI4910DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 40V |
| Current - continuous drain (Id) @ 25°C | 7.6A |
| Power - max | 3.1W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 855pF @ 20V |