Vishay Siliconix SI4909DY-T1-GE3
MPNSI4909DY-T1-GE3
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$1.0600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 40V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power - max | 3.2W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 63nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2000pF @ 20V |