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Vishay Siliconix SI4670DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4670DY-T1-GE3

MPNSI4670DY-T1-GE3
Active
$0.5093Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4670DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage25V
Current - continuous drain (Id) @ 25°C8A
Power - max2.8W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs18nC @ 10V
Input capacitance (Ciss) (Max) @ vds680pF @ 13V