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Vishay Siliconix SI4628DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4628DY-T1-GE3

MPNSI4628DY-T1-GE3
Obsolete
$1.0900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4628DY-T1-GE3 specifications
ParameterValue
SeriesSkyFET®, TrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation3.5W (Ta), 7.8W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs3mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3450 pF @ 15 V