Vishay Siliconix SI4599DY-T1-GE3
MPNSI4599DY-T1-GE3
Active
MOSFET N/P-CH 40V 6.8A 8SOIC
$0.9200Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40V |
| Current - continuous drain (Id) @ 25°C | 6.8A, 5.8A |
| Power - max | 3W, 3.1W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 35.5mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 640pF @ 20V |