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Vishay Siliconix SI4590DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4590DY-T1-GE3

MPNSI4590DY-T1-GE3
Active
$0.9700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4590DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C3.4A, 2.8A
Power - max2.4W, 3.4W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs57mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs11.5nC @ 10V
Input capacitance (Ciss) (Max) @ vds360pF @ 50V