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Vishay Siliconix SI4569DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4569DY-T1-GE3

MPNSI4569DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4569DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C7.6A, 7.9A
Power - max3.1W, 3.2W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs32nC @ 10V
Input capacitance (Ciss) (Max) @ vds855pF @ 20V