Skip to main content
Vishay Siliconix SI4567DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4567DY-T1-GE3

MPNSI4567DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4567DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C5A, 4.4A
Power - max2.75W, 2.95W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 4.1A, 10V
Gate charge (Qg) (Max) @ vgs12nC @ 10V
Input capacitance (Ciss) (Max) @ vds355pF @ 20V