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Vishay Siliconix SI4565ADY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4565ADY-T1-E3

MPNSI4565ADY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4565ADY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C6.6A, 5.6A
Power - max3.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs39mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs22nC @ 10V
Input capacitance (Ciss) (Max) @ vds625pF @ 20V