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Vishay Siliconix SI4563DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4563DY-T1-GE3

MPNSI4563DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4563DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C8A
Power - max3.25W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs85nC @ 10V
Input capacitance (Ciss) (Max) @ vds2390pF @ 20V