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Vishay Siliconix SI4562DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4562DY-T1-GE3

MPNSI4562DY-T1-GE3
Obsolete
$0.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4562DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Power - max2W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.6V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 7.1A, 4.5V
Gate charge (Qg) (Max) @ vgs50nC @ 4.5V