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Vishay Siliconix SI4561DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4561DY-T1-E3

MPNSI4561DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4561DY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C6.8A, 7.2A
Power - max3W, 3.3W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs35.5mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 10V
Input capacitance (Ciss) (Max) @ vds640pF @ 20V