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Vishay Siliconix SI4532CDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4532CDY-T1-GE3

MPNSI4532CDY-T1-GE3
Active
$0.7000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4532CDY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6A, 4.3A
Power - max2.78W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs47mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs9nC @ 10V
Input capacitance (Ciss) (Max) @ vds305pF @ 15V