Vishay Siliconix SI4511DY-T1-E3
MPNSI4511DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 7.2A, 4.6A |
| Power - max | 1.1W |
| Package | Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 14.5mOhm @ 9.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18nC @ 4.5V |