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Vishay Siliconix SI4501BDY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4501BDY-T1-GE3

MPNSI4501BDY-T1-GE3
Active

MOSFET N/P-CH 30V/8V 8SOIC

$0.6400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4501BDY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel, Common Drain
MountingSurface Mount
Drain to source voltage30V, 8V
Current - continuous drain (Id) @ 25°C12A, 8A
Power - max4.5W, 3.1W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs17mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs25nC @ 10V
Input capacitance (Ciss) (Max) @ vds805pF @ 15V