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Vishay Siliconix SI4501ADY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4501ADY-T1-GE3

MPNSI4501ADY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4501ADY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel, Common Drain
MountingSurface Mount
Drain to source voltage30V, 8V
Current - continuous drain (Id) @ 25°C6.3A, 4.1A
Power - max1.3W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 8.8A, 10V
Gate charge (Qg) (Max) @ vgs20nC @ 5V