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Vishay Siliconix SI4500BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4500BDY-T1-E3

MPNSI4500BDY-T1-E3
Obsolete
$0.5300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4500BDY-T1-E3 specifications
ParameterValue
FET typeN and P-Channel, Common Drain
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.6A, 3.8A
Power - max1.3W
PackageCut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 9.1A, 4.5V
Gate charge (Qg) (Max) @ vgs17nC @ 4.5V