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Vishay Siliconix SI4484EY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4484EY-T1-E3

MPNSI4484EY-T1-E3
Obsolete
$1.0700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4484EY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C4.8A (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA (Min)
Rds on (Max) @ id, vgs34mOhm @ 6.9A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V