Vishay Siliconix SI4477DY-T1-GE3
MPNSI4477DY-T1-GE3
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$1.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 26.6A (Tc) |
| Power dissipation | 3W (Ta), 6.6W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6.2mOhm @ 18A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 190 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4600 pF @ 10 V |