Vishay Siliconix SI4462DY-T1-E3
MPNSI4462DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Current - continuous drain (Id) @ 25°C | 1.15A (Ta) |
| Package | Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 480mOhm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9 nC @ 10 V |