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Vishay Siliconix SI4421DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4421DY-T1-E3

MPNSI4421DY-T1-E3
Active

MOSFET P-CH 20V 10A 8SO

$2.1400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4421DY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id800mV @ 850µA
Rds on (Max) @ id, vgs8.75mOhm @ 14A, 4.5V
Gate charge (Qg) (Max) @ vgs125 nC @ 4.5 V