Skip to main content
Vishay Siliconix SI4421DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4421DY-T1-E3

MPNSI4421DY-T1-E3
Active

MOSFET P-CH 20V 10A 8SO

$2.1400Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI4421DY-T1-E3 Technical Specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id800mV @ 850µA
Rds on (Max) @ id, vgs8.75mOhm @ 14A, 4.5V
Gate charge (Qg) (Max) @ vgs125 nC @ 4.5 V