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Vishay Siliconix SI4410BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4410BDY-T1-E3

MPNSI4410BDY-T1-E3
Obsolete
$0.8600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4410BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7.5A (Ta)
Power dissipation1.4W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V