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Vishay Siliconix SI4408DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4408DY-T1-GE3

MPNSI4408DY-T1-GE3
Active
$1.7077Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4408DY-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs4.5mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 4.5 V