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Vishay Siliconix SI4403BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4403BDY-T1-E3

MPNSI4403BDY-T1-E3
Obsolete
$1.9900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4403BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C7.3A (Ta)
Power dissipation1.35W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 350µA
Rds on (Max) @ id, vgs17mOhm @ 9.9A, 4.5V
Gate charge (Qg) (Max) @ vgs50 nC @ 5 V