Skip to main content
Vishay Siliconix SI4340DY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4340DY-T1-E3

MPNSI4340DY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4340DY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C7.3A, 9.9A
Power - max1.14W, 1.43W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case14-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs12mOhm @ 9.6A, 10V
Gate charge (Qg) (Max) @ vgs15nC @ 4.5V