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Vishay Siliconix SI4310BDY-T1-E3 — Discrete Semiconductors

Vishay Siliconix SI4310BDY-T1-E3

MPNSI4310BDY-T1-E3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4310BDY-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C7.5A, 9.8A
Power - max1.14W, 1.47W
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
FET featureLogic Level Gate
Case14-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs18nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds2370pF @ 15V