Vishay Siliconix SI4200DY-T1-GE3
MPNSI4200DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 25V |
| Current - continuous drain (Id) @ 25°C | 8A |
| Power - max | 2.8W |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 25mOhm @ 7.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 415pF @ 13V |