Vishay Siliconix SI4190DY-T1-GE3
MPNSI4190DY-T1-GE3
Obsolete
$8.7500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Package | Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.8V @ 250µA |
| Rds on (Max) @ id, vgs | 8.8mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2000 pF @ 50 V |