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Vishay Siliconix SI4153DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4153DY-T1-GE3

MPNSI4153DY-T1-GE3
Active

P-CHANNEL 30-V (D-S) MOSFET SO-8

$0.6900Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI4153DY-T1-GE3 Technical Specifications
ParameterValue
SeriesTrenchFET® Gen III
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14.3A (Ta), 19.3A (Tc)
Power dissipation3.1W (Ta), 5.6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 15 V