Vishay Siliconix SI4103DY-T1-GE3
MPNSI4103DY-T1-GE3
Active
$1.1500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen III |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Ta), 16A (Tc) |
| Power dissipation | 2.5W (Ta), 5.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 7.9mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 140 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5200 pF @ 15 V |