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Vishay Siliconix SI4004DY-T1-GE3 — Discrete Semiconductors

Vishay Siliconix SI4004DY-T1-GE3

MPNSI4004DY-T1-GE3
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4004DY-T1-GE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Current - continuous drain (Id) @ 25°C12A (Tc)
PackageCut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs13.8mOhm @ 11A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1280 pF @ 10 V