RN1415,LF
Toshiba Semiconductor
Tape & Reel (TR); Cut Tape (CT)Surface MountNPN - Pre-Biased
Ref. price$0.17
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Toshiba Semiconductor RN14 Interface Series
2 variants · Toshiba Semiconductor
About the Toshiba Semiconductor RN14 Interface Series
The Toshiba Semiconductor RN14 Interface Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-236-3, SC-59, SOT-23-3, current - collector cutoff of 500nA and FET type of NPN - Pre-Biased. Variants differ by current - collector (Ic), DC current gain (hFE) (Min) @ ic, vce and frequency, so you can match the exact current - collector (Ic) your application requires using the selection guide below. All listed Toshiba Semiconductor RN14 Interface Series part numbers are active and orderable.
Select a variant by
- Current - collector (Ic)
- 100 mA · 800 mA
- DC current gain (hFE) (Min) @ ic, vce
- 50 @ 10mA, 5V · 60 @ 100mA, 1V
- Frequency
- 250 MHz · 300 MHz
- Resistor - base (R1)
- 1 kOhms · 2.2 kOhms
- Resistor - emitter base (R2)
- 1 kOhms · 10 kOhms
- Vce saturation (Max) @ ib, ic
- 250mV @ 2mA, 50mA · 300mV @ 250µA, 5mA
Shared specifications
- Case
- TO-236-3, SC-59, SOT-23-3
- Current - collector cutoff
- 500nA
- FET type
- NPN - Pre-Biased
- Mounting
- Surface Mount
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Power - max
- 200 mW
- Voltage - collector emitter breakdown
- 50 V
Variant comparison
| Parameter | RN1415,LF | RN1421TE85LF |
|---|---|---|
| Current - collector (Ic) | 100 mA | 800 mA |
| DC current gain (hFE) (Min) @ ic, vce | 50 @ 10mA, 5V | 60 @ 100mA, 1V |
| Frequency | 250 MHz | 300 MHz |
| Resistor - base (R1) | 2.2 kOhms | 1 kOhms |
| Resistor - emitter base (R2) | 10 kOhms | 1 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA | 250mV @ 2mA, 50mA |
Request a quote on any Toshiba Semiconductor RN14 Interface Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.