Toshiba Semiconductor RN11 Microcontrollers Series

2 variants · Toshiba SemiconductorAll Microcontrollers & Processors (MCU / MPU / DSP) →

About the Toshiba Semiconductor RN11 Microcontrollers Series

The Toshiba Semiconductor RN11 Microcontrollers Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common current - collector (Ic) of 100 mA, current - collector cutoff of 500nA and FET type of NPN - Pre-Biased. Variants differ by case, DC current gain (hFE) (Min) @ ic, vce and power - max, so you can match the exact case your application requires using the selection guide below. All listed Toshiba Semiconductor RN11 Microcontrollers Series part numbers are active and orderable.

Select a variant by

Case: SC-75, SOT-416 · SOT-723
DC current gain (hFE) (Min) @ ic, vce: 50 @ 10mA, 5V · 80 @ 10mA, 5V
Power - max: 100 mW · 150 mW
Resistor - base (R1): 2.2 kOhms · 47 kOhms
Resistor - emitter base (R2): 10 kOhms · 47 kOhms
Vce saturation (Max) @ ib, ic: 300mV @ 250µA, 5mA · 300mV @ 500µA, 5mA

Shared specifications

Current - collector (Ic): 100 mA
Current - collector cutoff: 500nA
FET type: NPN - Pre-Biased
Mounting: Surface Mount
Package: Tape & Reel (TR); Cut Tape (CT)
Voltage - collector emitter breakdown: 50 V

Variant comparison

Parameter	RN1115,LF(CT	RN1104MFV,L3XHF(CT
Case	SC-75, SOT-416	SOT-723
DC current gain (hFE) (Min) @ ic, vce	50 @ 10mA, 5V	80 @ 10mA, 5V
Power - max	100 mW	150 mW
Resistor - base (R1)	2.2 kOhms	47 kOhms
Resistor - emitter base (R2)	10 kOhms	47 kOhms
Vce saturation (Max) @ ib, ic	300mV @ 250µA, 5mA	300mV @ 500µA, 5mA

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