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Toshiba Semiconductor and Storage BAV9 Series

2 variants · Toshiba Semiconductor and Storage

About the Toshiba Semiconductor and Storage BAV9 Series

The Toshiba Semiconductor and Storage BAV9 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common current - reverse leakage @ vr of 200 nA @ 80 V, diode configuration of 1 Pair Series Connection and mounting of Surface Mount. Variants differ by case, current - average rectified (Io) (per diode) and reverse recovery time, so you can match the exact case your application requires using the selection guide below. All listed Toshiba Semiconductor and Storage BAV9 Series part numbers are active and orderable.

Select a variant by

Case
SC-70, SOT-323 · TO-236-3, SC-59, SOT-23-3
Current - average rectified (Io) (per diode)
150mA · 215mA
Reverse recovery time
3 ns · 4 ns

Shared specifications

Current - reverse leakage @ vr
200 nA @ 80 V
Diode configuration
1 Pair Series Connection
Mounting
Surface Mount
Operating temperature - junction
150°C (Max)
Package
Tape & Reel (TR) Cut Tape (CT)
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Technology
Standard
Voltage - DC reverse (Vr)
100 V
Voltage - forward (Vf) (Max) @ if
1.25 V @ 150 mA

Variant comparison

ParameterBAV99,LMBAV99W,LF
CaseTO-236-3, SC-59, SOT-23-3SC-70, SOT-323
Current - average rectified (Io) (per diode)215mA150mA
Reverse recovery time3 ns4 ns

Request a quote on any Toshiba Semiconductor and Storage BAV9 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

All variants