Toshiba Semiconductor and Storage TTC5200(Q)
MPNTTC5200(Q)
Active
$2.6500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 230 V |
| Current - collector (Ic) | 15 A |
| Current - collector cutoff | 5µA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 80 @ 1A, 5V |
| Power - max | 150 W |
| Frequency - transition | 30MHz |
| Operating temperature | 150°C (TJ) |
| Package | Tray |
| Case | TO-3PL |
| Vce saturation (Max) @ ib, ic | 3V @ 800mA, 8A |