Toshiba Semiconductor and Storage TPCP8103-H(TE85LFM
MPNTPCP8103-H(TE85LFM
Obsolete
$0.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII-H |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.8A (Ta) |
| Power dissipation | 840mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 40mOhm @ 2.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 800 pF @ 10 V |